电工钢 ›› 2025, Vol. 7 ›› Issue (5): 7-.

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取向硅钢Goss剪切带与{111}<112>基体的取向偏转关系

陈思昊,沙玉辉,张 芳,程思飞,左 良   

  1. 东北大学 材料各向异性与织构教育部重点实验室 ,辽宁 沈阳 110819
  • 出版日期:2025-10-28 发布日期:2025-10-21

Orientation deviation relationship between Goss shear band in {111}<112> matrix in grain⁃oriented silicon steel

CHEN Sihao, SHA Yuhui, ZHANG Fang, CHENG Sifei, ZUO Liang   

  1. Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education,Northeastern University, Shenyang 110819, China

  • Online:2025-10-28 Published:2025-10-21

摘要: 高磁感取向硅钢二次再结晶Goss取向({110}<001>)来源于冷轧{111}<112>晶粒中的剪切带。阐明剪切带与基体晶粒取向偏差角关联性,可为进一步提高二次再结晶取向准确度提供新途径。本文采用粘塑性自洽模型结合实验测量的方法,探究了Euler取向空间沿φ1φ2轴偏转10°以内的{111}<112>基体中的Goss剪切带取向偏差角。研究发现,当{111}<112>基体沿φ1φ2轴偏转相同角度时,剪切带与准确Goss取向的φ1偏差角和φ2偏差角相近。当{111}<112>基体沿φ1<90°和φ2<45°方向混合偏转时,剪切带φ1偏差角小于φ2偏差角,而当基体沿φ1<90°和φ2>45°方向混合偏转时,剪切带φ2偏差角小于φ1偏差角,前者剪切带与准确Goss取向偏差角小于后者。在84°<φ1<90°且35°<φ2<46°的{111}<112>基体取向偏转区间,易获得偏差角小于3°的Goss取向剪切带。

关键词: 剪切带, Goss取向, 取向转动, 晶体塑性, 取向硅钢

Abstract: Secondary recrystallized Goss orientation ({110}<001>) in high magnetic flux density grain⁃oriented silicon steel originates from shear bands in cold rolled {111}<112> grains. To clarify the deviation correlation between Goss shear band and matrix grain can provide new routines for further enhanced accuracy of secondary recrystallized Goss orientation. In this study, a visco⁃plastic self⁃consistent (VPSC) model together with experimental measurements is used to investigate Goss deviation of shear bands in {111}<112> matrices deviating by up to 10° along φ1 and φ2 axes. When {111}<112> matrix deviates solely along φ1 or φ2 axis, shear band orientation exhibits similar φ1 and φ2 deviation angles from exact Goss orientation. When matrix deviates along both φ1<90° and φ2<45°, φ1 deviation of shear band orientation is smaller than φ2. Conversely, for matrix deviating along both φ1<90° and φ2>45°, φ1 deviation of shear band orientation is greater than φ2. Shear band deviation from exact Goss orientation is relatively smaller for {111}<112> matrices deviating along both φ1<90° and φ2<45°. Within the matrix deviation range of 84°<φ1<90° and 35°<φ2<46°, it is more likely to obtain Goss shear band with deviation angle less than 3°.

Key words: shear band, Goss orientation, orientation rotation, crystal plasticity, grain?oriented silicon steel