Abstract: High permeability grain-oriented silicon steel is a very important electromagnetic material, and its magnetic properties depend entirely on the sharpness of the Goss texture. The secondary recrystallization process of Goss grains is affected by many factors, but there are relatively few studies on the influence of the thickness of the matrix on the primary recrystallization, which leads to the imperfect understanding of the secondary recrystallization process of Goss grains. To solve the above problems, the primary recrystallization matrices of 0.23 mm and 0.27 mm thickness were studied in this study. Based on the experimental results, it was found that the grains in the 0.23 mm-thick primary recrystallization sample were finer than that in the 0.27 mm-thick oriented silicon steel primary recrystallization matrix; and the γ(〈111〉//ND) and {411}〈148〉 textures were stronger in 0.23 mm-thick primary recrystallization sample, and the inhibitor after nitriding was finer and more uniform due to more grain boundaries. The secondary recrystallization of Goss grains in 0.23 mm sample started earlier during high temperature annealing. Due to the characteristic that the thickness thinning will make the secondary recrystallization process of Goss grains occur earlier, the grain boundary pinning force of the inhibitor should be appropriately increased for thin gauge products to ensure that Goss grains with accurate internal orientation can prioritize the secondary recrystallization process within an appropriate temperature range.

Key words: grain-oriented silicon steel, secondary recrystallization, thickness, texture