电工钢 ›› 2026, Vol. 8 ›› Issue (4): 1-11.

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取向硅钢中Goss织构({011}〈100〉)起源与演化研究进展

傅超,涂杨,张宁,王美如,孟利   

  1. 钢铁研究总院有限公司 冶金工艺研究所,北京100081
  • 出版日期:2026-08-25 发布日期:2026-08-25

Research progress on the origin and evolution of Goss texture ({011}〈100〉) in grain-oriented silicon steel

FU Chao, TU Yang, ZHANG Ning, WANG Meiru, MENG Li   

  1. Metallurgical Technology Institute, Central Iron and Steel Research Institute, Beijing 100081, China
  • Online:2026-08-25 Published:2026-08-25

摘要: 取向硅钢是具有锋锐Goss织构({011}〈100〉)的软磁金属材料,Goss织构的形成与演化贯穿热轧、常化、冷轧、脱碳退火及高温退火全过程。基于微观组织和晶体学取向的“遗传”特性,本文系统综述了取向硅钢中Goss织构的起源与演化研究进展。在热轧阶段,Goss织构起源于热轧板次表层的剪切变形,轧辊与板面间摩擦导致板厚方向不均匀剪切应变是其主要成因。常化处理对热轧板中初步形成的Goss“种子”进行“筛选”与“强化”,同时优化抑制剂析出状态和晶界特征分布。冷轧过程中,绝大部分Goss取向转变为γ纤维织构,但少部分取向“种子”以亚稳态形式“残存”于剪切带和形变带内。脱碳退火处理使冷轧基体发生再结晶,“残存”的Goss取向“种子”在剪切带与形变带内形核,“重构”为具备异常长大潜力的Goss取向晶粒。高温退火阶段,少数Goss晶粒在抑制剂钉扎的基体中实现异常长大,最终形成锋锐的Goss织构。关于Goss晶粒异常长大的机制,学术界先后提出了重合位置点阵晶界(CSL)理论、高能晶界(HE)理论和固态浸润(SSW)理论,三种理论分别从晶界结构、晶界能及晶界能各向异性角度阐释了Goss晶粒的选择性生长机理,但仍存在争议。本文通过系统梳理该方向的研究脉络,为高性能取向硅钢的工艺优化与理论创新提供参考。

关键词: 取向硅钢;Goss织构;织构演化;二次再结晶;晶粒异常长大;抑制剂

Abstract: Grain-oriented silicon steel is a metallic soft magnetic material with sharp Goss texture ({011}〈100〉). The formation and evolution of Goss texture run through the whole process of hot rolling, normalizing, cold rolling, decarburization annealing and high temperature annealing. Based on “heredity” characteristics of microstructure and crystallography orientations, the origin and evolution of Goss texture in grain-oriented silicon steel are systematically reviewed in this paper. During the hot rolling stage, the Goss texture originates from shear deformation in the subsurface of the hot rolled plate, with the primary cause being the uneven shear strain along the plate thickness direction induced by friction between the rolls and the plate surface. Normalization treatment was used to “filter” and “strengthen” the Goss “seeds” initially formed in the hot-rolled sheet, and the precipitation state of the inhibitor and the distribution of grain boundary characteristics were optimized. During the cold rolling process, the majority of Goss orientations transform into γ-fiber texture, while a small portion of the orientation “seeds” remains in a metastable state within the shear bands and deformation bands. The decarburization annealing treatment induces recrystallization in the cold-rolled matrix, and the “residual” Goss orientation “seeds” nucleate within shear bands and deformation bands, where it is “reconstructed” into Goss-oriented grains with abnormal growth potential. In the high temperature annealing stage, a small number of Goss grains grow abnormally in the inhibitor pinned matrix, and finally form a sharp Goss texture. Regarding the mechanism of abnormal growth of Goss grains, the academia has successively proposed the coincidence site lattice grain boundary (CSL) theory, the high-energy grain boundary (HE) theory and the solid-state infiltration (SSW) theory. The three theories explain the selective growth mechanism of Goss grains from the perspective of grain boundary structure, grain boundary energy and grain boundary energy anisotropy, but they are still controversial. In this paper, the research context of this direction is systematically sorted out to provide reference for process optimization and theoretical innovation of high-performance grain-oriented silicon steel.

Key words: grain-oriented silicon steel; Goss texture; texture evolution; secondary recrystallization; abnormal grain growth; inhibitor