Abstract: Secondary recrystallized Goss orientation ({110}<001>) in high magnetic flux density grain⁃oriented silicon steel originates from shear bands in cold rolled {111}<112> grains. To clarify the deviation correlation between Goss shear band and matrix grain can provide new routines for further enhanced accuracy of secondary recrystallized Goss orientation. In this study, a visco⁃plastic self⁃consistent (VPSC) model together with experimental measurements is used to investigate Goss deviation of shear bands in {111}<112> matrices deviating by up to 10° along φ₁ and φ₂ axes. When {111}<112> matrix deviates solely along φ₁ or φ₂ axis, shear band orientation exhibits similar φ₁ and φ₂ deviation angles from exact Goss orientation. When matrix deviates along both φ₁<90° and φ₂<45°, φ₁ deviation of shear band orientation is smaller than φ₂. Conversely, for matrix deviating along both φ₁<90° and φ₂>45°, φ₁ deviation of shear band orientation is greater than φ₂. Shear band deviation from exact Goss orientation is relatively smaller for {111}<112> matrices deviating along both φ₁<90° and φ₂<45°. Within the matrix deviation range of 84°<φ₁<90° and 35°<φ₂<46°, it is more likely to obtain Goss shear band with deviation angle less than 3°.

Key words: shear band, Goss orientation, orientation rotation, crystal plasticity, grain?oriented silicon steel