Electrical Steel ›› 2024, Vol. 6 ›› Issue (6): 1-.

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Secondary recrystallization behavior in ultra-thin grain-oriented silicon steel produced by strip casting

Ultra-thin grain-oriented silicon steel strip is a key material applying on these fields, such as power, electronics, and military, because of its ultralow iron loss and high magnetic induction. Sub-rapid solidification characteristic of the strip casting technology contributes to produce highdensity inhibitor particles during processing of grain-oriented silicon steel. It helps to solve the problem that the rapid coarsening of inhibitor particles in ultra-thin strip leads to the weakened pinning force exerting on matrix grains, which results in incomplete secondary recrystallization structure. High-energy (HE) grain boundaries play an important role in the abnormal growth of Goss grains. During high-temperature annealing process at 925~950 ℃, the change of grain size of ultra-thin strip is not significant, and the proportions of HE grain boundaries around Goss grains increase. When the temperature is above 950 ℃, the grain boundaries around Goss grains move firstly, thus Goss grains swallow up the matrix grains to form abnormally grown grains. During abnormal growth stage, the proportion of HE grain boundaries surrounding Goss grains decrease continuously until secondary recrystallization is completed at 1 000 ℃.   

  1. (State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, China)
  • Online:2024-12-28 Published:2025-01-02

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Abstract: Ultra-thin grain-oriented silicon steel strip is a key material applying on these fields, such as power, electronics, and military, because of its ultralow iron loss and high magnetic induction. Sub-rapid solidification characteristic of the strip casting technology contributes to produce highdensity inhibitor particles during processing of grain-oriented silicon steel. It helps to solve the problem that the rapid coarsening of inhibitor particles in ultra-thin strip leads to the weakened pinning force exerting on matrix grains, which results in incomplete secondary recrystallization structure. High-energy (HE) grain boundaries play an important role in the abnormal growth of Goss grains. During high-temperature annealing process at 925~950 ℃, the change of grain size of ultra-thin strip is not significant, and the proportions of HE grain boundaries around Goss grains increase. When the temperature is above 950 ℃, the grain boundaries around Goss grains move firstly, thus Goss grains swallow up the matrix grains to form abnormally grown grains. During abnormal growth stage, the proportion of HE grain boundaries surrounding Goss grains decrease continuously until secondary recrystallization is completed at 1 000 ℃.

Key words: Strip casting, Grainoriented silicon steel, Ultrathin strip, Secondary recrystallization, Goss